AUIRF7665S2TR/TR1
Qualification Information ?
Automotive
(per AEC-Q101)
??
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
DFET2
MSL1
Class B
AEC-Q101-002
ESD
RoHS Compliant
Human Body Model
Charged Device Model
Class 2
AEC-Q101-001
Class IV
AEC-Q101-005
Yes
?
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com
?? Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
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相关代理商/技术参数
AUIRF7669L2TR 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7669L2TR 1 制造商:International Rectifier 功能描述:AUIRF7669L2TR1 - MOSFET,,N CH,100V,375A,DIRECTFET,L8
AUIRF7669L2TR1 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7675M2TR 功能描述:MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7675M2TR1 功能描述:MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF7732S2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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